logo
Dayoo Advanced Ceramic Co.,Ltd
producten
producten
Thuis > producten > Siliciumcarbide Keramiek > Diamond-Shaped Hollow Silicon Carbide Ceramic Wafer Carrier with High Thermal Conductivity and 1400℃ High-temperature Resistance for Semiconductor Applications

Diamond-Shaped Hollow Silicon Carbide Ceramic Wafer Carrier with High Thermal Conductivity and 1400℃ High-temperature Resistance for Semiconductor Applications

Productgegevens

Plaats van herkomst: CN

Merknaam: Dayoo

Betaling en verzendvoorwaarden

Min. bestelaantal: Aangepast

Prijs: CNY

Verpakking Details: Pakket

Levertijd: 60 werkdagen

Levering vermogen: Fabriek

Vind de beste prijs
Markeren:
Hoge thermische geleidbaarheid:
Ja
Bestand tegen thermische schokken:
Goed
Maximale temperatuur:
1380 ℃
Buigsterkte:
Mpa 280
Zuiverheid:
98%
Druksterkte:
> 2 GPa
Hoge thermische geleidbaarheid:
Ja
Bestand tegen thermische schokken:
Goed
Maximale temperatuur:
1380 ℃
Buigsterkte:
Mpa 280
Zuiverheid:
98%
Druksterkte:
> 2 GPa
Diamond-Shaped Hollow Silicon Carbide Ceramic Wafer Carrier with High Thermal Conductivity and 1400℃ High-temperature Resistance for Semiconductor Applications
Diamond-shaped Hollow Silicon Carbide Ceramic Wafer Carrier | Precision Hollow SiC Ceramic Support Plate Product Introduction This product is a Diamond-shaped Hollow Silicon Carbide Ceramic Wafer Carrier, manufactured from high-purity silicon carbide (SiC) ceramic raw materials. It features an overall diamond outline with multi-layer annular radial hollow structure in the center. Fabricated via atmospheric pressure high-temperature sintering and precision machining, it boasts